MMBT4403LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MMBT4403LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
NOT SPECIFIED
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Turn Off Time-Max (toff)
255ns
Turn On Time-Max (ton)
35ns
RoHS Status
Non-RoHS Compliant
MMBT4403LT1 Product Details
MMBT4403LT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.In the part, the transition frequency is 200MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
MMBT4403LT1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 750mV @ 50mA, 500mA a transition frequency of 200MHz
MMBT4403LT1 Applications
There are a lot of Rochester Electronics, LLC MMBT4403LT1 applications of single BJT transistors.