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MSB92ASWT1

MSB92ASWT1

MSB92ASWT1

Rochester Electronics, LLC

MSB92ASWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MSB92ASWT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
RoHS Status Non-RoHS Compliant
MSB92ASWT1 Product Details

MSB92ASWT1 Overview


DC current gain in this device equals 120 @ 1mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).As a result, the part has a transition frequency of 50MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.

MSB92ASWT1 Features


the DC current gain for this device is 120 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz

MSB92ASWT1 Applications


There are a lot of Rochester Electronics, LLC MSB92ASWT1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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