MSB92ASWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MSB92ASWT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
150mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
Non-RoHS Compliant
MSB92ASWT1 Product Details
MSB92ASWT1 Overview
DC current gain in this device equals 120 @ 1mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).As a result, the part has a transition frequency of 50MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.
MSB92ASWT1 Features
the DC current gain for this device is 120 @ 1mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 50MHz
MSB92ASWT1 Applications
There are a lot of Rochester Electronics, LLC MSB92ASWT1 applications of single BJT transistors.