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MSD601-ST1

  • MSD601-ST1
  • MSD601-ST1

MSD601-ST1

MSD601-ST1

Rochester Electronics, LLC

MSD601-ST1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MSD601-ST1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 290 @ 2mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
RoHS Status Non-RoHS Compliant
MSD601-ST1 Product Details

MSD601-ST1 Overview


In this device, the DC current gain is 290 @ 2mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 50V.

MSD601-ST1 Features


the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA

MSD601-ST1 Applications


There are a lot of Rochester Electronics, LLC MSD601-ST1 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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