MSD601-ST1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MSD601-ST1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 2mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
MSD601-ST1G Product Details
MSD601-ST1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
MSD601-ST1G Features
the DC current gain for this device is 290 @ 2mA 10V the vce saturation(Max) is 500mV @ 10mA, 100mA
MSD601-ST1G Applications
There are a lot of Rochester Electronics, LLC MSD601-ST1G applications of single BJT transistors.