PN2222AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
PN2222AG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Turn Off Time-Max (toff)
285ns
Turn On Time-Max (ton)
35ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.116600
$0.1166
10
$0.110000
$1.1
100
$0.103774
$10.3774
500
$0.097900
$48.95
1000
$0.092358
$92.358
PN2222AG Product Details
PN2222AG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).In the part, the transition frequency is 300MHz.Device displays Collector Emitter Breakdown (40V maximal voltage).
PN2222AG Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA a transition frequency of 300MHz
PN2222AG Applications
There are a lot of Rochester Electronics, LLC PN2222AG applications of single BJT transistors.