PN5134 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
PN5134 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10mA 1V
Current - Collector Cutoff (Max)
400nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
10V
Current - Collector (Ic) (Max)
500mA
Turn Off Time-Max (toff)
18ns
Turn On Time-Max (ton)
18ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
PN5134 Product Details
PN5134 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 1V.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Device displays Collector Emitter Breakdown (10V maximal voltage).
PN5134 Features
the DC current gain for this device is 20 @ 10mA 1V the vce saturation(Max) is 250mV @ 1mA, 10mA
PN5134 Applications
There are a lot of Rochester Electronics, LLC PN5134 applications of single BJT transistors.