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PZT751T1

  • PZT751T1
  • PZT751T1

PZT751T1

PZT751T1

Rochester Electronics, LLC

PZT751T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

PZT751T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 800mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 2A
Transition Frequency 75MHz
Frequency - Transition 75MHz
RoHS Status Non-RoHS Compliant
PZT751T1 Product Details

PZT751T1 Overview


This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.75MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.

PZT751T1 Features


the DC current gain for this device is 75 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 75MHz

PZT751T1 Applications


There are a lot of Rochester Electronics, LLC PZT751T1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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