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SMMBF4391LT1G

SMMBF4391LT1G

SMMBF4391LT1G

Rochester Electronics, LLC

SMMBF4391LT1G datasheet pdf and Transistors - JFETs product details from Rochester Electronics, LLC stock available on our website

SOT-23

SMMBF4391LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 225mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V VGS
Drain to Source Voltage (Vdss) 30V
Current - Drain (Idss) @ Vds (Vgs=0) 50mA @ 15V
Voltage - Cutoff (VGS off) @ Id 4V @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 30Ohms
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.23000 $0.23
500 $0.2277 $113.85
1000 $0.2254 $225.4
1500 $0.2231 $334.65
2000 $0.2208 $441.6
2500 $0.2185 $546.25
SMMBF4391LT1G Product Details
The Rochester Electronics Transistors JFETs SMMBF4391LT1G is a small signal N-channel JFET designed for use in a variety of applications. It features a low gate-source capacitance of 0.2 pF, a low gate-drain capacitance of 0.2 pF, and a low gate-drain leakage current of 0.1 nA. It also has a low on-resistance of 0.2 ohms and a high breakdown voltage of 30 volts. This makes it ideal for use in high-frequency switching applications, such as in audio amplifiers, radio receivers, and other electronic circuits. Additionally, it is suitable for use in low-noise applications, such as in low-noise amplifiers and other sensitive circuits. The SMMBF4391LT1G is also RoHS compliant, making it a great choice for environmentally conscious applications.

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