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SS9013FBU

  • SS9013FBU
  • SS9013FBU

SS9013FBU

SS9013FBU

Rochester Electronics, LLC

SS9013FBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

SS9013FBU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 78 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 500mA
RoHS Status ROHS3 Compliant
SS9013FBU Product Details

SS9013FBU Overview


This device has a DC current gain of 78 @ 50mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.The device has a 20V maximal voltage - Collector Emitter Breakdown.

SS9013FBU Features


the DC current gain for this device is 78 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA

SS9013FBU Applications


There are a lot of Rochester Electronics, LLC SS9013FBU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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