BDW23TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDW23TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BDW23
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
6A
BDW23TU Product Details
BDW23TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.When VCE saturation is 3V @ 60mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Product comes in the supplier's device package TO-220-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BDW23TU Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 60mA, 6A the supplier device package of TO-220-3
BDW23TU Applications
There are a lot of ON Semiconductor BDW23TU applications of single BJT transistors.