TIP131G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP131G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 30mA, 6A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.43000
$0.43
500
$0.4257
$212.85
1000
$0.4214
$421.4
1500
$0.4171
$625.65
2000
$0.4128
$825.6
2500
$0.4085
$1021.25
TIP131G Product Details
TIP131G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 30mA, 6A, transistor means Ic has reached transistors maximum value (saturated).TO-220AB is the supplier device package for this product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
TIP131G Features
the DC current gain for this device is 1000 @ 4A 4V the vce saturation(Max) is 3V @ 30mA, 6A the supplier device package of TO-220AB
TIP131G Applications
There are a lot of Rochester Electronics, LLC TIP131G applications of single BJT transistors.