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TIP131G

TIP131G

TIP131G

Rochester Electronics, LLC

TIP131G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TIP131G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-65°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 30mA, 6A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
RoHS StatusROHS3 Compliant
In-Stock:18914 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.43000$0.43
500$0.4257$212.85
1000$0.4214$421.4
1500$0.4171$625.65
2000$0.4128$825.6
2500$0.4085$1021.25

TIP131G Product Details

TIP131G Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.When VCE saturation is 3V @ 30mA, 6A, transistor means Ic has reached transistors maximum value (saturated).TO-220AB is the supplier device package for this product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

TIP131G Features


the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 3V @ 30mA, 6A
the supplier device package of TO-220AB

TIP131G Applications


There are a lot of Rochester Electronics, LLC TIP131G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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