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2SA1576AT106S

2SA1576AT106S

2SA1576AT106S

ROHM Semiconductor

2SA1576AT106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1576AT106S Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -150mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1576
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -150mA
VCEsat-Max 0.5 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.091080 $0.09108
500 $0.066971 $33.4855
1000 $0.055809 $55.809
2000 $0.051201 $102.402
5000 $0.047851 $239.255
10000 $0.044513 $445.13
15000 $0.043049 $645.735
50000 $0.042329 $2116.45
2SA1576AT106S Product Details

2SA1576AT106S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at -150mA is essential for high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Its current rating is -150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 140MHz.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.

2SA1576AT106S Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz

2SA1576AT106S Applications


There are a lot of ROHM Semiconductor 2SA1576AT106S applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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