2SA1576AT106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1576AT106S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1576
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
140MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
Continuous Collector Current
-150mA
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.091080
$0.09108
500
$0.066971
$33.4855
1000
$0.055809
$55.809
2000
$0.051201
$102.402
5000
$0.047851
$239.255
10000
$0.044513
$445.13
15000
$0.043049
$645.735
50000
$0.042329
$2116.45
2SA1576AT106S Product Details
2SA1576AT106S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at -150mA is essential for high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Its current rating is -150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 140MHz.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SA1576AT106S Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -6V the current rating of this device is -150mA a transition frequency of 140MHz
2SA1576AT106S Applications
There are a lot of ROHM Semiconductor 2SA1576AT106S applications of single BJT transistors.