2SA1576U3T106S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1576U3T106S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
140MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.261000
$0.261
10
$0.246226
$2.46226
100
$0.232289
$23.2289
500
$0.219141
$109.5705
1000
$0.206736
$206.736
2SA1576U3T106S Product Details
2SA1576U3T106S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SA1576U3T106S Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA
2SA1576U3T106S Applications
There are a lot of ROHM Semiconductor 2SA1576U3T106S applications of single BJT transistors.