MMBT2222ALP4-7B Overview

DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 600mA should be maintained to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.In the part, the transition frequency is 300MHz.Single BJT transistor can be broken down at a voltage of 40V volts.The maximum collector current is 600mA volts.

MMBT2222ALP4-7B Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT2222ALP4-7B Applications

There are a lot of Diodes Incorporated MMBT2222ALP4-7B applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface