PBSS4041PT,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4041PT,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
150MHz
Base Part Number
PBSS4041P
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2.7A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
35
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.17100
$0.513
6,000
$0.16150
$0.969
15,000
$0.15675
$2.35125
PBSS4041PT,215 Product Details
PBSS4041PT,215 Overview
In this device, the DC current gain is 150 @ 1A 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 150MHz is present in the part.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 2.7A volts at Single BJT transistors maximum.
PBSS4041PT,215 Features
the DC current gain for this device is 150 @ 1A 2V the vce saturation(Max) is 360mV @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 150MHz
PBSS4041PT,215 Applications
There are a lot of Nexperia USA Inc. PBSS4041PT,215 applications of single BJT transistors.