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2SA1797T100Q

2SA1797T100Q

2SA1797T100Q

ROHM Semiconductor

2SA1797T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1797T100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1797
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -6V
hFE Min 82
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1472 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.076640$0.07664
500$0.056353$28.1765
1000$0.046961$46.961
2000$0.043083$86.166
5000$0.040265$201.325
10000$0.037456$374.56
15000$0.036224$543.36
50000$0.035618$1780.9

2SA1797T100Q Product Details

2SA1797T100Q Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.200MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 2A volts is possible.

2SA1797T100Q Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz

2SA1797T100Q Applications


There are a lot of ROHM Semiconductor 2SA1797T100Q applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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