2SA1797T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SA1797T100Q Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1797
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
200MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
82
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.076640
$0.07664
500
$0.056353
$28.1765
1000
$0.046961
$46.961
2000
$0.043083
$86.166
5000
$0.040265
$201.325
10000
$0.037456
$374.56
15000
$0.036224
$543.36
50000
$0.035618
$1780.9
2SA1797T100Q Product Details
2SA1797T100Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at -6V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.200MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 2A volts is possible.
2SA1797T100Q Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 350mV @ 50mA, 1A the emitter base voltage is kept at -6V the current rating of this device is -3A a transition frequency of 200MHz
2SA1797T100Q Applications
There are a lot of ROHM Semiconductor 2SA1797T100Q applications of single BJT transistors.