2SA1812T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1812T100Q Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-400V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1812
Number of Elements
1
Element Configuration
Single
Power - Max
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
12MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 10mA, 100mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
-400V
Emitter Base Voltage (VEBO)
-7V
hFE Min
82
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.120090
$0.12009
10
$0.113293
$1.13293
100
$0.106880
$10.688
500
$0.100830
$50.415
1000
$0.095123
$95.123
2SA1812T100Q Product Details
2SA1812T100Q Overview
This device has a DC current gain of 120 @ 50mA 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10mA, 100mA.Keeping the emitter base voltage at -7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts can be achieved.
2SA1812T100Q Features
the DC current gain for this device is 120 @ 50mA 5V the vce saturation(Max) is 1V @ 10mA, 100mA the emitter base voltage is kept at -7V the current rating of this device is -500mA
2SA1812T100Q Applications
There are a lot of ROHM Semiconductor 2SA1812T100Q applications of single BJT transistors.