2SA2072TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.As you can see, the part has a transition frequency of 180MHz.When collector current reaches its maximum, it can reach 3A volts.
2SA2072TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 180MHz
2SA2072TLQ Applications
There are a lot of ROHM Semiconductor 2SA2072TLQ applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
