MMBTA70LT1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 5mA 10V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

MMBTA70LT1 Features

the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz

MMBTA70LT1 Applications

There are a lot of ON Semiconductor MMBTA70LT1 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface