MMBT4401_D87Z Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.During maximum operation, collector current can be as low as 600mA volts.
MMBT4401_D87Z Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
MMBT4401_D87Z Applications
There are a lot of ON Semiconductor MMBT4401_D87Z applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
