2SAR562F3TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR562F3TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
3-UDFN Exposed Pad
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-N3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 150mA, 3A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
6A
Transition Frequency
180MHz
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.834833
$0.834833
10
$0.787579
$7.87579
100
$0.742999
$74.2999
500
$0.700942
$350.471
1000
$0.661267
$661.267
2SAR562F3TR Product Details
2SAR562F3TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 150mA, 3A.In the part, the transition frequency is 180MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
2SAR562F3TR Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 300mV @ 150mA, 3A a transition frequency of 180MHz
2SAR562F3TR Applications
There are a lot of ROHM Semiconductor 2SAR562F3TR applications of single BJT transistors.