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MMST5551Q-7-F

MMST5551Q-7-F

MMST5551Q-7-F

Diodes Incorporated

MMST5551Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST5551Q-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 100MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.06000 $0.06
500 $0.0594 $29.7
1000 $0.0588 $58.8
1500 $0.0582 $87.3
2000 $0.0576 $115.2
2500 $0.057 $142.5
MMST5551Q-7-F Product Details

MMST5551Q-7-F Overview


In this device, the DC current gain is 80 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As a result, the part has a transition frequency of 100MHz.A 160V maximal voltage - Collector Emitter Breakdown is present in the device.

MMST5551Q-7-F Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz

MMST5551Q-7-F Applications


There are a lot of Diodes Incorporated MMST5551Q-7-F applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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