ZXTN19020DFFTA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 190mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 190mV @ 180mA, 6.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In the part, the transition frequency is 160MHz.An input voltage of 20V volts is the breakdown voltage.A maximum collector current of 6.5A volts is possible.
ZXTN19020DFFTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 180mA, 6.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DFFTA Applications
There are a lot of Diodes Incorporated ZXTN19020DFFTA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
