2SB1181TLP Overview

In this device, the DC current gain is 82 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A -1A continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In extreme cases, the collector current can be as low as 1A volts.

2SB1181TLP Features

the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A

2SB1181TLP Applications

There are a lot of ROHM Semiconductor 2SB1181TLP applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter