2SB1188T100R Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Parts of this part have transition frequencies of 100MHz.Input voltage breakdown is available at 32V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1188T100R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1188T100R Applications
There are a lot of ROHM Semiconductor 2SB1188T100R applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
