2SB1236ATV2Q Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -2V allows maximum design flexibility.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).As a result, the part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 1.5A volts.
2SB1236ATV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1236ATV2Q Applications
There are a lot of ROHM Semiconductor 2SB1236ATV2Q applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
