2SB1239TV2 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SB1239TV2 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
3-SIP
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Voltage - Rated DC
-40V
Max Power Dissipation
1W
Reach Compliance Code
unknown
Current Rating
-2A
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power - Max
1W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.2mA, 600mA
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SB1239TV2 Product Details
2SB1239TV2 Overview
This device has a DC current gain of 1000 @ 500mA 2V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1.2mA, 600mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).A maximum collector current of 2A volts can be achieved.
2SB1239TV2 Features
the DC current gain for this device is 1000 @ 500mA 2V the vce saturation(Max) is 1.5V @ 1.2mA, 600mA the emitter base voltage is kept at 5V the current rating of this device is -2A
2SB1239TV2 Applications
There are a lot of ROHM Semiconductor 2SB1239TV2 applications of single BJT transistors.