2SB1580T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1580T100 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1580
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Gain Bandwidth Product
50MHz
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
-100V
Transition Frequency
50MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
8V
hFE Min
1000
Continuous Collector Current
-2A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.457835
$0.457835
10
$0.431920
$4.3192
100
$0.407472
$40.7472
500
$0.384407
$192.2035
1000
$0.362648
$362.648
2SB1580T100 Product Details
2SB1580T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at -2A for high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 2A volts can be achieved.
2SB1580T100 Features
the DC current gain for this device is 1000 @ 1A 2V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 8V the current rating of this device is -2A a transition frequency of 50MHz
2SB1580T100 Applications
There are a lot of ROHM Semiconductor 2SB1580T100 applications of single BJT transistors.