2SB1580T100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltage should be kept at -2A for high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 2A volts can be achieved.
2SB1580T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1580T100 Applications
There are a lot of ROHM Semiconductor 2SB1580T100 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
