2SB1697T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1697T100 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1697
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
180mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
360MHz
Max Breakdown Voltage
12V
Frequency - Transition
360MHz
Collector Base Voltage (VCBO)
15V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.384720
$6.38472
10
$6.023321
$60.23321
100
$5.682378
$568.2378
500
$5.360734
$2680.367
1000
$5.057296
$5057.296
2SB1697T100 Product Details
2SB1697T100 Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 50mA, 1A.As you can see, the part has a transition frequency of 360MHz.Single BJT transistor can be broken down at a voltage of 12V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1697T100 Features
the DC current gain for this device is 270 @ 200mA 2V the vce saturation(Max) is 180mV @ 50mA, 1A a transition frequency of 360MHz
2SB1697T100 Applications
There are a lot of ROHM Semiconductor 2SB1697T100 applications of single BJT transistors.