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2SB1697T100

2SB1697T100

2SB1697T100

ROHM Semiconductor

2SB1697T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1697T100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation500mW
Terminal Position SINGLE
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1697
Pin Count3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 180mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage12V
Transition Frequency 360MHz
Max Breakdown Voltage 12V
Frequency - Transition 360MHz
Collector Base Voltage (VCBO) 15V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13032 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.384720$6.38472
10$6.023321$60.23321
100$5.682378$568.2378
500$5.360734$2680.367
1000$5.057296$5057.296

2SB1697T100 Product Details

2SB1697T100 Overview


This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 50mA, 1A.As you can see, the part has a transition frequency of 360MHz.Single BJT transistor can be broken down at a voltage of 12V volts.During maximum operation, collector current can be as low as 2A volts.

2SB1697T100 Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 180mV @ 50mA, 1A
a transition frequency of 360MHz

2SB1697T100 Applications


There are a lot of ROHM Semiconductor 2SB1697T100 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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