2SC1740STPQ Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.Its current rating is 150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.There is a breakdown input voltage of 50V volts that it can take.During maximum operation, collector current can be as low as 150mA volts.

2SC1740STPQ Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz

2SC1740STPQ Applications

There are a lot of ROHM Semiconductor 2SC1740STPQ applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting