2SC1741ASTPQ Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.The breakdown input voltage is 50V volts.When collector current reaches its maximum, it can reach 1A volts.

2SC1741ASTPQ Features

the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz

2SC1741ASTPQ Applications

There are a lot of ROHM Semiconductor 2SC1741ASTPQ applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver