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BD244TU

BD244TU

BD244TU

ON Semiconductor

BD244TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD244TU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD244
Power - Max 65W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 6A
BD244TU Product Details

BD244TU Overview


This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 1A, 6A.Single BJT transistor comes in a supplier device package of TO-220-3.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD244TU Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the supplier device package of TO-220-3

BD244TU Applications


There are a lot of ON Semiconductor BD244TU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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