BD244TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD244TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD244
Power - Max
65W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
6A
BD244TU Product Details
BD244TU Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 1A, 6A.Single BJT transistor comes in a supplier device package of TO-220-3.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD244TU Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the supplier device package of TO-220-3
BD244TU Applications
There are a lot of ON Semiconductor BD244TU applications of single BJT transistors.