2SB1216S-TL-H Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 5V.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 130MHz.During maximum operation, collector current can be as low as 4A volts.

2SB1216S-TL-H Features

the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

2SB1216S-TL-H Applications

There are a lot of ON Semiconductor 2SB1216S-TL-H applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter