2SC4061KT146N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4061KT146N Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4061
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 10mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
56
Continuous Collector Current
100mA
VCEsat-Max
2 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.126360
$0.12636
10
$0.119208
$1.19208
100
$0.112460
$11.246
500
$0.106094
$53.047
1000
$0.100089
$100.089
2SC4061KT146N Product Details
2SC4061KT146N Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 56 @ 10mA 10V DC current gain.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 5mA, 50mA.A constant collector voltage of 100mA is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SC4061KT146N Features
the DC current gain for this device is 56 @ 10mA 10V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 100MHz
2SC4061KT146N Applications
There are a lot of ROHM Semiconductor 2SC4061KT146N applications of single BJT transistors.