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2SC4061KT146N

2SC4061KT146N

2SC4061KT146N

ROHM Semiconductor

2SC4061KT146N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4061KT146N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4061
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage2V
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 56
Continuous Collector Current 100mA
VCEsat-Max 2 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:17795 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.126360$0.12636
10$0.119208$1.19208
100$0.112460$11.246
500$0.106094$53.047
1000$0.100089$100.089

2SC4061KT146N Product Details

2SC4061KT146N Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 56 @ 10mA 10V DC current gain.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 5mA, 50mA.A constant collector voltage of 100mA is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).As you can see, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SC4061KT146N Features


the DC current gain for this device is 56 @ 10mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz

2SC4061KT146N Applications


There are a lot of ROHM Semiconductor 2SC4061KT146N applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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