BU806 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BU806 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BU806
Power - Max
60W
Transistor Type
NPN - Darlington
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 5A
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
8A
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.24094
$992.752
BU806 Product Details
BU806 Overview
As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 5A.Product comes in TO-220-3 supplier package.Single BJT transistor shows a 200V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BU806 Features
the vce saturation(Max) is 1.5V @ 50mA, 5A the supplier device package of TO-220-3
BU806 Applications
There are a lot of ON Semiconductor BU806 applications of single BJT transistors.