DSS5220V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 155 @ 1A 2V.A collector emitter saturation voltage of -80mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 20V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
DSS5220V-7 Features
the DC current gain for this device is 155 @ 1A 2V
a collector emitter saturation voltage of -80mV
the vce saturation(Max) is 390mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DSS5220V-7 Applications
There are a lot of Diodes Incorporated DSS5220V-7 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
