2SC4083T106P Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 5mA, 10mA means Ic has reached its maximum value(saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 50mA in order to achieve high efficiency.The emitter base voltage can be kept at 3V for high efficiency.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Single BJT transistor can be broken down at a voltage of 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC4083T106P Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC4083T106P Applications
There are a lot of ROHM Semiconductor 2SC4083T106P applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
