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2SC4617EBHZGTLQ

  • 2SC4617EBHZGTLQ
  • 2SC4617EBHZGTLQ

2SC4617EBHZGTLQ

2SC4617EBHZGTLQ

ROHM Semiconductor

2SC4617EBHZGTLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC4617EBHZGTLQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 180MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.325000 $0.325
10 $0.306604 $3.06604
100 $0.289249 $28.9249
500 $0.272876 $136.438
1000 $0.257430 $257.43
2SC4617EBHZGTLQ Product Details

2SC4617EBHZGTLQ Overview


DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 500mA.Device displays Collector Emitter Breakdown (50V maximal voltage).

2SC4617EBHZGTLQ Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 500mA

2SC4617EBHZGTLQ Applications


There are a lot of ROHM Semiconductor 2SC4617EBHZGTLQ applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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