2SC4617EBHZGTLQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 500mA.Device displays Collector Emitter Breakdown (50V maximal voltage).
2SC4617EBHZGTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 500mA
2SC4617EBHZGTLQ Applications
There are a lot of ROHM Semiconductor 2SC4617EBHZGTLQ applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
