2SCR372PT100Q Overview

In this device, the DC current gain is 120 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 300mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Parts of this part have transition frequencies of 220MHz.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

2SCR372PT100Q Features

the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 220MHz

2SCR372PT100Q Applications

There are a lot of ROHM Semiconductor 2SCR372PT100Q applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface