2SCR533PT100 Overview

This device has a DC current gain of 180 @ 50mA 3V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 50mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.320MHz is present in the transition frequency.Breakdown input voltage is 50V volts.A maximum collector current of 3A volts can be achieved.

2SCR533PT100 Features

the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 320MHz

2SCR533PT100 Applications

There are a lot of ROHM Semiconductor 2SCR533PT100 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface