2SCR574DGTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR574DGTL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2015
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
10W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.496758
$0.496758
10
$0.468640
$4.6864
100
$0.442113
$44.2113
500
$0.417088
$208.544
1000
$0.393479
$393.479
2SCR574DGTL Product Details
2SCR574DGTL Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A breakdown input voltage of 80V volts can be used.The maximum collector current is 2A volts.
2SCR574DGTL Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 300mV @ 50mA, 1A
2SCR574DGTL Applications
There are a lot of ROHM Semiconductor 2SCR574DGTL applications of single BJT transistors.