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2SCR574DGTL

2SCR574DGTL

2SCR574DGTL

ROHM Semiconductor

2SCR574DGTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR574DGTL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 10W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 80V
Max Breakdown Voltage 80V
Frequency - Transition 280MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.496758 $0.496758
10 $0.468640 $4.6864
100 $0.442113 $44.2113
500 $0.417088 $208.544
1000 $0.393479 $393.479
2SCR574DGTL Product Details

2SCR574DGTL Overview


DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A breakdown input voltage of 80V volts can be used.The maximum collector current is 2A volts.

2SCR574DGTL Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 50mA, 1A

2SCR574DGTL Applications


There are a lot of ROHM Semiconductor 2SCR574DGTL applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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