2SD2118TLQ Overview

In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 20V volts.The maximum collector current is 5A volts.

2SD2118TLQ Features

the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 150MHz

2SD2118TLQ Applications

There are a lot of ROHM Semiconductor 2SD2118TLQ applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface