2SD2150T100S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2150T100S Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
500mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2150
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
290MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
3A
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.073520
$0.07352
500
$0.054059
$27.0295
1000
$0.045049
$45.049
2000
$0.041329
$82.658
5000
$0.038626
$193.13
10000
$0.035931
$359.31
15000
$0.034749
$521.235
50000
$0.034168
$1708.4
2SD2150T100S Product Details
2SD2150T100S Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 3A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).290MHz is present in the transition frequency.As a result, it can handle voltages as low as 20V volts.A maximum collector current of 3A volts can be achieved.
2SD2150T100S Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at 6V the current rating of this device is 3A a transition frequency of 290MHz
2SD2150T100S Applications
There are a lot of ROHM Semiconductor 2SD2150T100S applications of single BJT transistors.