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2N2102 PBFREE

  • 2N2102 PBFREE
  • 2N2102 PBFREE

2N2102 PBFREE

2N2102 PBFREE

Central Semiconductor Corp

2N2102 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N2102 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 2nA ICBO
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 60MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.961000 $1.961
10 $1.850000 $18.5
100 $1.745283 $174.5283
500 $1.646493 $823.2465
1000 $1.553296 $1553.296
2N2102 PBFREE Product Details

2N2102 PBFREE Overview


DC current gain in this device equals 40 @ 150mA 10V, which is the ratio of the base current to the collector current.Device displays Collector Emitter Breakdown (65V maximal voltage).

2N2102 PBFREE Features


the DC current gain for this device is 40 @ 150mA 10V

2N2102 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N2102 PBFREE applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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