Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SD2672TL

2SD2672TL

2SD2672TL

ROHM Semiconductor

2SD2672TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2672TL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating4A
[email protected] Reflow Temperature-Max (s) 10
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power - Max 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 40mA, 2A
Collector Emitter Breakdown Voltage12V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:26040 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.327336$2.327336
10$2.195600$21.956
100$2.071321$207.1321
500$1.954076$977.038
1000$1.843468$1843.468

2SD2672TL Product Details

2SD2672TL Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 40mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).In this part, there is a transition frequency of 250MHz.The maximum collector current is 4A volts.

2SD2672TL Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 250MHz

2SD2672TL Applications


There are a lot of ROHM Semiconductor 2SD2672TL applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News