TIP112 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
TIP112 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 4V
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.375000
$0.375
10
$0.353774
$3.53774
100
$0.333749
$33.3749
500
$0.314857
$157.4285
1000
$0.297035
$297.035
TIP112 Product Details
TIP112 Overview
DC current gain in this device equals 1000 @ 1A 4V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 8mA, 2A.Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
TIP112 Features
the DC current gain for this device is 1000 @ 1A 4V the vce saturation(Max) is 2.5V @ 8mA, 2A the supplier device package of TO-220AB
TIP112 Applications
There are a lot of Rochester Electronics, LLC TIP112 applications of single BJT transistors.