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TIP112

TIP112

TIP112

Rochester Electronics, LLC

TIP112 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TIP112 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
RoHS StatusROHS3 Compliant
In-Stock:6048 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.375000$0.375
10$0.353774$3.53774
100$0.333749$33.3749
500$0.314857$157.4285
1000$0.297035$297.035

TIP112 Product Details

TIP112 Overview


DC current gain in this device equals 1000 @ 1A 4V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 8mA, 2A.Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.

TIP112 Features


the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the supplier device package of TO-220AB

TIP112 Applications


There are a lot of Rochester Electronics, LLC TIP112 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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