BUL741 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL741 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
60W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BUL741
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
60W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 450mA 3V
Current - Collector Cutoff (Max)
250μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 2A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
15V
hFE Min
48
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.532459
$0.532459
10
$0.502320
$5.0232
100
$0.473887
$47.3887
500
$0.447063
$223.5315
1000
$0.421758
$421.758
BUL741 Product Details
BUL741 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 450mA 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 15V can result in a high level of efficiency.In extreme cases, the collector current can be as low as 2.5A volts.
BUL741 Features
the DC current gain for this device is 25 @ 450mA 3V the vce saturation(Max) is 1.5V @ 600mA, 2A the emitter base voltage is kept at 15V
BUL741 Applications
There are a lot of STMicroelectronics BUL741 applications of single BJT transistors.