STN851 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 1V.With a collector emitter saturation voltage of 320mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics STN851 applications of single BJT transistors.
- Driver
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- Interface
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- Muting
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- Inverter
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