2SD2704KT146 Overview

This device has a DC current gain of 820 @ 4mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 50mV, which allows for maximum design flexibility.A VCE saturation (Max) of 100mV @ 3mA, 30mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 300mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 25V.Single BJT transistor contains a transSingle BJT transistorion frequency of 35MHz.Input voltage breakdown is available at 20V volts.Maximum collector currents can be below 300mA volts.

2SD2704KT146 Features

the DC current gain for this device is 820 @ 4mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 100mV @ 3mA, 30mA
the emitter base voltage is kept at 25V
a transition frequency of 35MHz

2SD2704KT146 Applications

There are a lot of ROHM Semiconductor 2SD2704KT146 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter