BC857BU3T106 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC857BU3T106 Features

the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC857BU3T106 Applications

There are a lot of ROHM Semiconductor BC857BU3T106 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting